PART |
Description |
Maker |
IRFBC30AS IRFBC30L IRFBC30AL IRFBC30ASTRL IRFBC30A |
600V Single N-Channel HEXFET Power MOSFET in a D2-Pak package 600V Single N-Channel HEXFET Power MOSFET in a TO-262 package HEXFET? Power MOSFET Power MOSFET(Vdss=600V/ Rds(on)max=2.2ohm/ Id=3.6A) 600V,3.6A,N-Channel HEXFET Power MOSFET for SMPS(600V,3.6A,N沟道 HEXFET 功率MOS场效应管,用于开关模式电 Power MOSFET(Vdss=600V, Rds(on)max=2.2ohm, Id=3.6A) 功率MOSFET(减振钢板基本\u003d 600V电压的Rds(on)最大值\u003d 2.2ohm,身份证\u003d 3.6A
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IRF[International Rectifier] International Rectifier, Corp.
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IRC840 |
Power MOSFET(Vdss=500V/ Rds(on)=0.85ohm/ Id=8.0A) Power MOSFET(Vdss=500V, Rds(on)=0.85ohm, Id=8.0A) Hexfet? Power MOSFET Power MOSFET(Vdss=500V Rds(on)=0.85ohm Id=8.0A) 500V Single N-Channel HEXFET Power MOSFET in a TO-220 5-Pin (HEXSense) package
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IRF[International Rectifier]
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IRFI720G IRFI720GPBF |
400V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package Power MOSFET(Vdss=400V, Rds(on)=1.8ohm, Id=2.6A) HEXFET? Power MOSFET Power MOSFET(Vdss=400V/ Rds(on)=1.8ohm/ Id=2.6A)
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IRF[International Rectifier]
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IRFD120 |
Power MOSFET(Vdss=100V, Rds(on)=0.27ohm, Id=1.3A) 功率MOSFET(减振钢板基本\u003d 100V的,的Rds(on)\u003d 0.27ohm,身份证\u003d 1.3a标准 Power MOSFET(Vdss=100V/ Rds(on)=0.27ohm/ Id=1.3A) HEXFET? Power MOSFET 100V Single N-Channel HEXFET Power MOSFET in a HEXDIP package
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International Rectifier, Corp. IRF[International Rectifier]
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IRL3714L IRL3714S IRL3714 IRL3714STRR |
TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 36A I(D) | TO-263AB 晶体管| MOSFET的| N沟道| 20V的五(巴西)直| 36A条(丁)|63AB HEXFET? Power MOSFET Power MOSFET(Vdss=20V, Rds(on)max=20mohm, Id=36A) 20V Single N-Channel HEXFET Power MOSFET in a TO-220AB package 20V Single N-Channel HEXFET Power MOSFET in a TO-262 package 20V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
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International Rectifier, Corp. http:// IRF[International Rectifier]
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IRFZ44NL IRFZ44NS IRFZ44NSTRR IRFZ44NLPBF IRFZ44NS |
55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package 55V Single N-Channel HEXFET Power MOSFET in a TO-262 package HEXFET? Power MOSFET Power MOSFET(Vdss=55V, Rds(on)=0.0175ohm, Id=49A) (IRFZ44NL / IRFZ44NS) Power MOSFET TRANSISTOR | MOSFET | N-CHANNEL | 55V V(BR)DSS | 49A I(D) | TO-263AB 晶体管| MOSFET的| N沟道| 55V的五(巴西)直| 49A条(丁)|63AB
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IRF[International Rectifier] International Rectifier, Corp.
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IRFL014N |
55V,1.9A, N-Channel HEXFET Power MOSFET(55V,1.9A,N沟道 HEXFET 功率MOS场效应管) 55V的,1.9AN沟道HEXFET功率MOSFET5V的,1.9A沟道的HEXFET功率马鞍山场效应管) Power MOSFET(Vdss=55V, Rds(on)=0.16ohm, Id=1.9A) Power MOSFET(Vdss=55V Rds(on)=0.16ohm Id=1.9A)
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International Rectifier, Corp. IRF[International Rectifier]
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IRF6215LPBF IRF6215SPBF IRF6215RLPBF |
Advanced Process Technology HEXFET POWER MOSFET ( VDSS=-150V , RDS(on)=0.29ヘ , ID=-13A ) HEXFET POWER MOSFET ( VDSS=-150V , RDS(on)=0.29Ω , ID=-13A )
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Vishay Siliconix International Rectifier
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IRFR5505 IRFU5055 IRFU5505 IRFRU5505 IRFR5505PBF I |
P Channel Surface Mount HEXFET Power MOSFET(P娌??琛ㄨ创??EXFET???MOS?烘?搴??) -55V Single P-Channel HEXFET Power MOSFET in a I-Pak package -55V Single P-Channel HEXFET Power MOSFET in a D-Pak package Power MOSFET(Vdss=-55V, Rds(on)=0.11ohm, Id=-18A) HEXFET? Power MOSFET
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IRF[International Rectifier] http://
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IRFBG30 |
1000V Single N-Channel HEXFET Power MOSFET in a TO-220AB package Power MOSFET(Vdss=1000V, Rds(on)=5.0ohm, Id=3.1A) HEXFET? Power MOSFET Power MOSFET(Vdss=1000V/ Rds(on)=5.0ohm/ Id=3.1A)
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IRF[International Rectifier]
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IRFR9014 IRFU9014 IRFR9014TRL |
HEXFET Power MOSFET HEXFET功率MOSFET -60V Single P-Channel HEXFET Power MOSFET in a D-Pak package -60V Single P-Channel HEXFET Power MOSFET in a I-Pak package Power MOSFET(Vdss=-60V Rds(on)=0.50ohm Id=-5.1A) Power MOSFET(Vdss=-60V, Rds(on)=0.50ohm, Id=-5.1A) 功率MOSFET(减振钢板基本\u003d- 60V的,的Rds(on)\u003d 0.50ohm,身份证\u003d- 5.1A
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IRF[International Rectifier] Samsung semiconductor International Rectifier, Corp.
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